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2N5192
STMicroelectronicsRoHS 
RoHS compliant
RoHS compliantPackage TO-225AA, TO-126-3
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description
STMICROELECTRONICS 2N5192 Bipolar (BJT) Single Transistor, NPN, 80 V, 40 W, 4 A, 80 hFE
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Inventory: 9363
Minimum: 1
Total Price: USD $0.18
Unit Price: USD $0.180798
≥1 USD $0.180798
≥10 USD $0.170565
≥100 USD $0.160911
≥500 USD $0.151797
≥1000 USD $0.143205
Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Number of Pins 3
Weight 90.718474mg
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Tube
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 80V
Max Power Dissipation 40W
Current Rating 4A
Frequency 2MHz
Base Part Number 2N51
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 40W
Case Connection ISOLATED
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 1.5A 2V
Current - Collector Cutoff (Max) 1mA
Vce Saturation (Max) @ Ib, Ic 1.4V @ 1A, 4A
Collector Emitter Breakdown Voltage 80V
Transition Frequency 2MHz
Collector Emitter Saturation Voltage -1.2V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
hFE Min 20
Dimensions
Height 11.05mm
Length 7.8mm
Width 2.9mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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