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BC56-10PA,115
Nexperia USA Inc.RoHS 
RoHS compliant
RoHS compliantPackage 3-PowerUDFN
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description
TRANSISTOR NPN 80V 1A SOT1061
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Inventory: 8027
Minimum: 1
Total Price: USD $0.43
Unit Price: USD $0.427029
≥1 USD $0.427029
≥10 USD $0.402863
≥100 USD $0.380056
≥500 USD $0.358538
≥1000 USD $0.338246
Technical Details
Supply Chain
Factory Lead Time 8 Weeks
Physical
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-PowerUDFN
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Max Power Dissipation 420mW
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) 260
Frequency 180MHz
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
Number of Elements 1
Configuration SINGLE
Power Dissipation 1.65W
Case Connection COLLECTOR
Power - Max 420mW
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 63 @ 150mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage 80V
Transition Frequency 180MHz
Max Breakdown Voltage 80V
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 5V
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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