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2SA1312GRTE85LF
Toshiba Semiconductor and StorageRoHS 
RoHS compliant
RoHS compliantPackage TO-236-3, SC-59, SOT-23-3
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description
Trans GP BJT PNP 120V 0.1A 3-Pin S-Mini T/R
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Inventory: 4768
Minimum: 1
Total Price: USD $0.08
Unit Price: USD $0.0836
≥1 USD $0.0836
≥500 USD $0.0684
≥1000 USD $0.0665
≥2000 USD $0.0646
≥5000 USD $0.06175
≥10000 USD $0.05605
Technical Details
Supply Chain
Factory Lead Time 11 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature 125°C TJ
Packaging Cut Tape (CT)
Published 2009
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Subcategory Other Transistors
Max Power Dissipation 150mW
Terminal Position DUAL
Terminal Form GULL WING
Number of Elements 1
Element Configuration Single
Power - Max 150mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 100MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 6V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage 120V
Transition Frequency 100MHz
Max Breakdown Voltage 120V
Collector Base Voltage (VCBO) -120V
Emitter Base Voltage (VEBO) -5V
hFE Min 200
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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