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BC847BFZ-7B
Diodes IncorporatedRoHS 
RoHS compliant
RoHS compliantPackage 3-XFDFN
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description
Bipolar Transistors - BJT NPN SS Trans 435mW 45Vceo 0.435W 125mV
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Inventory: 3083
Minimum: 1
Total Price: USD $2.19
Unit Price: USD $2.188282
≥1 USD $2.188282
≥10 USD $2.064413
≥100 USD $1.947563
≥500 USD $1.837313
≥1000 USD $1.73332
Technical Details
Supply Chain
Factory Lead Time 6 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-XFDFN
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e4
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Max Power Dissipation 435mW
Terminal Position BOTTOM
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Gain Bandwidth Product 300MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage 45V
Transition Frequency 180MHz
Collector Emitter Saturation Voltage 200mV
Max Breakdown Voltage 45V
Frequency - Transition 100MHz
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 6V
hFE Min 200
Continuous Collector Current 100mA
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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