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2SA1952TLQ
ROHM SemiconductorRoHS 
RoHS compliant
RoHS compliantPackage TO-252-3, DPak (2 Leads + Tab), SC-63
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description
TRANS PNP 60V 5A SOT-428
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Inventory: 588
Minimum: 1
Total Price: USD $0.31
Unit Price: USD $0.310862
≥1 USD $0.310862
≥10 USD $0.293266
≥100 USD $0.276664
≥500 USD $0.261004
≥1000 USD $0.246235
Technical Details
Supply Chain
Factory Lead Time 20 Weeks
Physical
Contact Plating Copper, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Dimensions
Height 2.3mm
Length 6.5mm
Width 5.5mm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2000
JESD-609 Code e2
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Copper (Sn98Cu2)
HTS Code 8541.29.00.75
Subcategory Other Transistors
Voltage - Rated DC -60V
Max Power Dissipation 1W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -5A
Time@Peak Reflow Temperature-Max (s) 10
Base Part Number 2SA1952
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Transistor Application SWITCHING
Gain Bandwidth Product 80MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 5A
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1A 2V
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 200mA, 4A
Collector Emitter Breakdown Voltage 60V
Max Frequency 80MHz
Transition Frequency 80MHz
Collector Emitter Saturation Voltage -300mV
Max Breakdown Voltage 60V
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) -5V
hFE Min 120
Continuous Collector Current -5A
Turn Off Time-Max (toff) 1800 ns
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