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2DB1182Q-13

Diodes Incorporated
RoHS
RoHS RoHS compliant
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description TRANS PNP 32V 2A TO252
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Inventory: 5780
Minimum: 1
Total Price: USD $0.35
Unit Price: USD $0.352028
≥1 USD $0.352028
≥10 USD $0.332102
≥100 USD $0.313305
≥500 USD $0.295569
≥1000 USD $0.278844

Technical Details

Supply Chain

Factory Lead Time 13 Weeks

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 3.949996g
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Subcategory Other Transistors
Max Power Dissipation 10W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 110MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number 2DB1182
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Power Dissipation 10W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 110MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 32V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 500mA 3V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 800mV @ 200mA, 2A
Collector Emitter Breakdown Voltage 32V
Transition Frequency 110MHz
Collector Emitter Saturation Voltage -800mV
Max Breakdown Voltage 32V
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 5V

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

FDB9409-F085
ON Semiconductor

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