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MMBT5401-G
Comchip TechnologyRoHS 
RoHS compliant
RoHS compliantPackage TO-236-3, SC-59, SOT-23-3
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description
RF Bipolar Transistors VCEO=-150V IC=-600mA
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Inventory: 3152
Minimum: 1
Total Price: USD $0.02
Unit Price: USD $0.02103
≥1 USD $0.02103
≥500 USD $0.015456
≥1000 USD $0.01288
≥2000 USD $0.011818
≥5000 USD $0.011045
≥10000 USD $0.010276
≥15000 USD $0.009936
≥50000 USD $0.009778
Technical Details
Supply Chain
Factory Lead Time 10 Weeks
Compliance
RoHS Status ROHS3 Compliant
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Subcategory Other Transistors
Max Power Dissipation 300mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G3
Number of Elements 1
Element Configuration Single
Power - Max 300mW
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 150V
Transition Frequency 100MHz
Frequency - Transition 100MHz
Emitter Base Voltage (VEBO) -5V
hFE Min 80
Continuous Collector Current -600mA
Alternative Model
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