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2DB1689-7

Diodes Incorporated
RoHS
RoHS RoHS compliant
Package SC-70, SOT-323
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description DIODES INC. 2DB1689-7 Bipolar (BJT) Single Transistor, PNP, 12 V, 300 MHz, 300 mW, 500 mA, 270 hFE
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Inventory: 4043
Minimum: 1
Total Price: USD $8.91
Unit Price: USD $8.9072
≥1 USD $8.9072
≥10 USD $7.30835
≥100 USD $7.08035
≥500 USD $6.8514
≥1000 USD $6.6234

Technical Details

Supply Chain

Factory Lead Time 16 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3
Weight 6.010099mg
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination SMD/SMT
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 300mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 300MHz
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 500mW
Power - Max 300mW
Transistor Application SWITCHING
Gain Bandwidth Product 300MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 12V
Max Collector Current 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 270 @ 200mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 200mV @ 25mA, 500mA
Collector Emitter Breakdown Voltage 12V
Transition Frequency 300MHz
Max Breakdown Voltage 12V
Collector Base Voltage (VCBO) 15V
Emitter Base Voltage (VEBO) 6V
hFE Min 270

Dimensions

Height 1mm
Length 2.15mm
Width 1.3mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

RCX200N20
ROHM Semiconductor

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