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BD135-16
STMicroelectronicsRoHS 
RoHS compliant
RoHS compliantPackage TO-225AA, TO-126-3
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description
Bipolar Transistors - BJT NPN Silicon Trnsistr
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Inventory: 3149
Minimum: 1
Total Price: USD $0.05
Unit Price: USD $0.050519
≥1 USD $0.050519
≥500 USD $0.03714
≥1000 USD $0.030956
≥2000 USD $0.028392
≥5000 USD $0.026536
≥10000 USD $0.024688
≥15000 USD $0.023881
≥50000 USD $0.023476
Technical Details
Supply Chain
Factory Lead Time 8 Weeks
Lifecycle Status NRND (Last Updated: 7 months ago)
Physical
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Tube
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 1.25W
Base Part Number BD135
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 1.25W
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage 45V
Transition Frequency 250MHz
Collector Emitter Saturation Voltage 500mV
Collector Base Voltage (VCBO) 45V
Emitter Base Voltage (VEBO) 5V
hFE Min 100
Dimensions
Height 10.8mm
Length 7.8mm
Width 2.7mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
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