Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 1997
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 500mOhm
Additional Feature LOGIC LEVEL COMPATIBLE
Subcategory Other Transistors
Voltage - Rated DC -30V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Current Rating -900mA
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 500mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 500mW
Turn On Delay Time 8 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 300m Ω @ 1A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 135pF @ 15V
Current - Continuous Drain (Id) @ 25°C 900mA Ta
Gate Charge (Qg) (Max) @ Vgs 3nC @ 4.5V
Rise Time 16 ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 16 ns
Turn-Off Delay Time 35 ns
Continuous Drain Current (ID) 900mA
Threshold Voltage -800mV
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.9A
Drain to Source Breakdown Voltage -30V
Dual Supply Voltage -30V
Max Junction Temperature (Tj) 150°C
Nominal Vgs -1.7 V