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FDY301NZ
ON SemiconductorRoHS 
RoHS compliant
RoHS compliantPackage SC-89, SOT-490
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 20V 200MA SC-89
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Inventory: 1493
Minimum: 1
Total Price: USD $0.42
Unit Price: USD $0.41515
≥1 USD $0.41515
≥10 USD $0.34105
≥100 USD $0.32965
≥500 USD $0.3192
≥1000 USD $0.30875
≥3000 USD $0.27645
Technical Details
Supply Chain
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 5Ohm
Terminal Finish Tin (Sn)
Additional Feature ESD PROTECTION
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Number of Elements 1
Power Dissipation-Max 625mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 625mW
Turn On Delay Time 6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5 Ω @ 200mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 60pF @ 10V
Current - Continuous Drain (Id) @ 25°C 200mA Ta
Gate Charge (Qg) (Max) @ Vgs 1.1nC @ 4.5V
Rise Time 8 ns
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 8 ns
Turn-Off Delay Time 8 ns
Continuous Drain Current (ID) 200mA
Threshold Voltage 1.5V
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 0.2A
Drain to Source Breakdown Voltage 20V
Dimensions
Height 780μm
Length 1.7mm
Width 980μm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-89, SOT-490
Number of Pins 3
Weight 30mg
Transistor Element Material SILICON
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