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IRLML6246TRPBF

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-236-3, SC-59, SOT-23-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 20V 4.1A SOT-23
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Inventory: 10400
Minimum: 5
Total Price: USD $0.65
Unit Price: USD $0.1292
≥5 USD $0.1292
≥50 USD $0.1064
≥150 USD $0.1026
≥500 USD $0.09975
≥3000 USD $0.09595
≥6000 USD $0.08645

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series HEXFET?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 46MOhm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Number of Elements 1
Power Dissipation-Max 1.3W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.3W
Turn On Delay Time 3.6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 46m Ω @ 4.1A, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 5μA
Input Capacitance (Ciss) (Max) @ Vds 290pF @ 16V
Current - Continuous Drain (Id) @ 25°C 4.1A Ta
Gate Charge (Qg) (Max) @ Vgs 3.5nC @ 4.5V
Rise Time 4.9 ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 6 ns
Turn-Off Delay Time 11 ns
Continuous Drain Current (ID) 4.1A
Threshold Voltage 12V
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 20V
Recovery Time 13 ns

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON

Dimensions

Height 1.016mm
Length 3.0226mm
Width 1.397mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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