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NTR1P02LT1G
ON SemiconductorRoHS 
RoHS compliant
RoHS compliantPackage TO-236-3, SC-59, SOT-23-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 20V 1.3A SOT-23
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Inventory: 3142
Minimum: 1
Total Price: USD $0.12
Unit Price: USD $0.1159
≥1 USD $0.1159
≥10 USD $0.095
≥100 USD $0.09215
≥500 USD $0.0893
≥1000 USD $0.08645
Technical Details
Supply Chain
Factory Lead Time 14 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Physical
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Dimensions
Height 940μm
Length 2.9mm
Width 1.3mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2004
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 220MOhm
Subcategory Other Transistors
Voltage - Rated DC -20V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -1.3A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Power Dissipation-Max 400mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 400mW
Turn On Delay Time 7 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 220m Ω @ 750mA, 4.5V
Vgs(th) (Max) @ Id 1.25V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 225pF @ 5V
Current - Continuous Drain (Id) @ 25°C 1.3A Ta
Gate Charge (Qg) (Max) @ Vgs 5.5nC @ 4V
Rise Time 15 ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 18 ns
Continuous Drain Current (ID) 1.3A
Threshold Voltage -1V
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage -20V
Alternative Model
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