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NTR5198NLT1G

ON Semiconductor
RoHS
RoHS RoHS compliant
Package TO-236-3, SC-59, SOT-23-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description MOSFET Pwr MOSFET 60V 2.2A 155mOhm SGL N-CH
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Inventory: 1435
Minimum: 5
Total Price: USD $0.82
Unit Price: USD $0.16435
≥5 USD $0.16435
≥50 USD $0.1349
≥150 USD $0.13015
≥500 USD $0.12635
≥3000 USD $0.12255
≥6000 USD $0.10925

Technical Details

Physical

Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Weight 1.437803g
Transistor Element Material SILICON

Dimensions

Height 1.01mm
Length 3.04mm
Width 1.4mm

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 900mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.5W
Turn On Delay Time 5 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 155m Ω @ 1A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 182pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.7A Ta
Gate Charge (Qg) (Max) @ Vgs 2.8nC @ 4.5V
Rise Time 7 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 2 ns
Turn-Off Delay Time 13 ns
Continuous Drain Current (ID) 2.2A
Threshold Voltage 2.5V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.205Ohm
Drain to Source Breakdown Voltage 60V

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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