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DMN1019UFDE-7

Diodes Incorporated
RoHS
RoHS RoHS compliant
Package 6-UDFN Exposed Pad
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description MOSFET N CH 12V 11A U-DFN2020-6E
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Inventory: 4275
Minimum: 1
Total Price: USD $0.28
Unit Price: USD $0.2755
≥1 USD $0.2755
≥10 USD $0.2261
≥100 USD $0.21945
≥500 USD $0.21185
≥1000 USD $0.2052

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Physical

Contact Plating Gold
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-UDFN Exposed Pad
Number of Pins 6
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2017
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
JESD-30 Code R-PDSO-N3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 690mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 7.6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 10m Ω @ 9.7A, 4.5V
Vgs(th) (Max) @ Id 800mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2425pF @ 10V
Current - Continuous Drain (Id) @ 25°C 11A Ta
Gate Charge (Qg) (Max) @ Vgs 50.6nC @ 8V
Rise Time 22.2 ns
Drain to Source Voltage (Vdss) 12V
Drive Voltage (Max Rds On,Min Rds On) 1.2V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 16.8 ns
Turn-Off Delay Time 57.6 ns
Continuous Drain Current (ID) 11A
Gate to Source Voltage (Vgs) 8V

Dimensions

Height 580μm
Length 2.05mm
Width 2.05mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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