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SI1013R-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package SC-75A
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description MOSFET 20V 350mA 175mW 1.2 ohms @ 4.5V
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Inventory: 3983
Minimum: 1
Total Price: USD $0.18
Unit Price: USD $0.17765
≥1 USD $0.17765
≥10 USD $0.1463
≥100 USD $0.14155
≥500 USD $0.1368
≥1000 USD $0.133

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-75A
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2001
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 1.2Ohm
Terminal Finish Matte Tin (Sn)
Additional Feature LOW THRESHOLD
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 150mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 150mW
Turn On Delay Time 5 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.2 Ω @ 350mA, 4.5V
Vgs(th) (Max) @ Id 450mV @ 250μA (Min)
Current - Continuous Drain (Id) @ 25°C 350mA Ta
Gate Charge (Qg) (Max) @ Vgs 1.5nC @ 4.5V
Rise Time 9 ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±6V
Fall Time (Typ) 9 ns
Turn-Off Delay Time 35 ns
Continuous Drain Current (ID) -400mA
Threshold Voltage -450mV
Gate to Source Voltage (Vgs) 6V
Drain to Source Breakdown Voltage -20V

Dimensions

Height 700μm
Length 1.58mm
Width 760μm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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