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ZVN3320FTA
Diodes IncorporatedRoHS 
RoHS compliant
RoHS compliantPackage TO-236-3, SC-59, SOT-23-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET N-CH 200V 0.06A 3-Pin SOT-23 T/R
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Inventory: 9388
Minimum: 1
Total Price: USD $0.12
Unit Price: USD $0.1216
≥1 USD $0.1216
≥10 USD $0.09975
≥100 USD $0.0969
≥500 USD $0.0931
≥1000 USD $0.09025
Technical Details
Supply Chain
Factory Lead Time 17 Weeks
Physical
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2001
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 25Ohm
Subcategory FET General Purpose Power
Voltage - Rated DC 200V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 60mA
Time@Peak Reflow Temperature-Max (s) 40
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 330mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 330mW
Turn On Delay Time 5 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 25 Ω @ 100mA, 10V
Vgs(th) (Max) @ Id 3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 45pF @ 25V
Current - Continuous Drain (Id) @ 25°C 60mA Ta
Rise Time 7 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 6 ns
Continuous Drain Current (ID) 60mA
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.06A
Drain to Source Breakdown Voltage 200V
Pulsed Drain Current-Max (IDM) 1A
Feedback Cap-Max (Crss) 5 pF
Dimensions
Height 1.02mm
Length 3.04mm
Width 1.4mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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