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SI1012R-T1-GE3
Vishay SiliconixRoHS 
RoHS compliant
RoHS compliantPackage SC-75A
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 20V 500MA SC-75A
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Inventory: 9061
Minimum: 1
Total Price: USD $0.19
Unit Price: USD $0.1938
≥1 USD $0.1938
≥10 USD $0.1596
≥100 USD $0.1539
≥500 USD $0.14915
≥1000 USD $0.1444
Technical Details
Supply Chain
Factory Lead Time 14 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-75A
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 700MOhm
Terminal Finish Matte Tin (Sn)
Additional Feature LOW THRESHOLD
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 150mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 150mW
Turn On Delay Time 5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 700m Ω @ 600mA, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250μA
Current - Continuous Drain (Id) @ 25°C 500mA Ta
Gate Charge (Qg) (Max) @ Vgs 0.75nC @ 4.5V
Rise Time 5 ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±6V
Fall Time (Typ) 5 ns
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 600mA
Threshold Voltage 800mV
Gate to Source Voltage (Vgs) 6V
Drain Current-Max (Abs) (ID) 0.5A
Drain to Source Breakdown Voltage 20V
Max Junction Temperature (Tj) 150°C
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Dimensions
Height 800μm
Length 1.58mm
Width 760μm
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