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DMG7430LFG-7
Diodes IncorporatedRoHS 
RoHS compliant
RoHS compliantPackage 8-PowerVDFN
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 10.5A PWRDI3333
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Inventory: 10555
Minimum: 5
Total Price: USD $1.07
Unit Price: USD $0.2147
≥5 USD $0.2147
≥50 USD $0.1767
≥150 USD $0.171
≥500 USD $0.1653
≥2000 USD $0.16055
≥4000 USD $0.14345
Technical Details
Supply Chain
Factory Lead Time 17 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Weight 72.007789mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e4
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
JESD-30 Code S-PDSO-N5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 900mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 5.2 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 11m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1281pF @ 15V
Current - Continuous Drain (Id) @ 25°C 10.5A Ta
Gate Charge (Qg) (Max) @ Vgs 26.7nC @ 10V
Rise Time 21.2 ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 5.1 ns
Turn-Off Delay Time 22.3 ns
Continuous Drain Current (ID) 10.5A
Gate to Source Voltage (Vgs) 20V
DS Breakdown Voltage-Min 30V
Dimensions
Height 850μm
Length 3.35mm
Width 3.35mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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