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TP0610K-T1-E3
Vishay SiliconixRoHS 
RoHS compliant
RoHS compliantPackage TO-236-3, SC-59, SOT-23-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET P-CH 60V 0.185A 3-Pin TO-236 T/R
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Inventory: 976
Minimum: 1
Total Price: USD $0.17
Unit Price: USD $0.16625
≥1 USD $0.16625
≥10 USD $0.1368
≥100 USD $0.13205
≥500 USD $0.12825
≥1000 USD $0.1235
Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 1.437803g
Transistor Element Material SILICON
Dimensions
Height 1.12mm
Length 3.04mm
Width 1.4mm
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 10Ohm
Terminal Finish Matte Tin (Sn)
Additional Feature ESD PROTECTION, LOW THRESHOLD
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 20
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 350mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 350mW
Turn On Delay Time 20 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 23pF @ 25V
Current - Continuous Drain (Id) @ 25°C 185mA Ta
Gate Charge (Qg) (Max) @ Vgs 1.7nC @ 15V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 35 ns
Continuous Drain Current (ID) -185mA
Threshold Voltage -3V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -60V
Max Junction Temperature (Tj) 150°C
Nominal Vgs -3 V
Compliance
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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