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IRLML6244TRPBF

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-236-3, SC-59, SOT-23-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 20V 6.3A SOT-23
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Inventory: 27355
Minimum: 5
Total Price: USD $0.83
Unit Price: USD $0.16625
≥5 USD $0.16625
≥50 USD $0.1368
≥150 USD $0.13205
≥500 USD $0.12825
≥3000 USD $0.1235
≥6000 USD $0.11115

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON

Dimensions

Height 1.12mm
Length 3.04mm
Width 1.4mm

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
Series HEXFET?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 27MOhm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.3W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.3W
Turn On Delay Time 4.9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 21m Ω @ 6.3A, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 10μA
Input Capacitance (Ciss) (Max) @ Vds 700pF @ 16V
Current - Continuous Drain (Id) @ 25°C 6.3A Ta
Gate Charge (Qg) (Max) @ Vgs 8.9nC @ 4.5V
Rise Time 7.5 ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) 6.3A
Threshold Voltage 900mV
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 20V
Recovery Time 18 ns
Max Junction Temperature (Tj) 150°C
Nominal Vgs 12 V

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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