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ZXMN6A09GTA
Diodes IncorporatedRoHS 
RoHS compliant
RoHS compliantPackage TO-261-4, TO-261AA
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
DIODES INC. - ZXMN6A09GTA - MOSFET, N, SOT-223
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Inventory: 8011
Minimum: 1
Total Price: USD $1.18
Unit Price: USD $1.17895
≥1 USD $1.17895
≥10 USD $0.9671
≥100 USD $0.93765
≥500 USD $0.90725
≥1000 USD $0.87685
Technical Details
Supply Chain
Factory Lead Time 17 Weeks
Dimensions
Height 1.65mm
Length 6.7mm
Width 3.7mm
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2003
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Resistance 40mOhm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Powers
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 6.8A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 4
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.9W
Case Connection DRAIN
Turn On Delay Time 4.9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 40m Ω @ 8.2A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1407pF @ 40V
Current - Continuous Drain (Id) @ 25°C 5.4A Ta
Gate Charge (Qg) (Max) @ Vgs 24.2nC @ 5V
Rise Time 5 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 4.6 ns
Turn-Off Delay Time 25.3 ns
Continuous Drain Current (ID) 6.9A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 5A
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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