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DMN5L06TK-7
Diodes IncorporatedRoHS 
RoHS compliant
RoHS compliantPackage SOT-523
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 50V 280MA SOT-523
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Inventory: 992
Minimum: 1
Total Price: USD $0.19
Unit Price: USD $0.1938
≥1 USD $0.1938
≥10 USD $0.1596
≥100 USD $0.1539
≥500 USD $0.14915
≥1000 USD $0.1444
Technical Details
Supply Chain
Factory Lead Time 14 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-523
Number of Pins 3
Weight 2.012816mg
Transistor Element Material SILICON
Dimensions
Height 750μm
Length 1.6mm
Width 800μm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 150mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 150mW
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2 Ω @ 50mA, 5V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 25V
Current - Continuous Drain (Id) @ 25°C 280mA Ta
Drive Voltage (Max Rds On,Min Rds On) 1.8V 5V
Vgs (Max) ±20V
Continuous Drain Current (ID) 280mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.28A
Drain-source On Resistance-Max 3Ohm
Drain to Source Breakdown Voltage 50V
Feedback Cap-Max (Crss) 5 pF
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