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DMP10H4D2S-7
Diodes IncorporatedRoHS 
RoHS compliant
RoHS compliantPackage TO-236-3, SC-59, SOT-23-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 100V 0.27A SOT23
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Inventory: 35760
Minimum: 5
Total Price: USD $0.66
Unit Price: USD $0.13205
≥5 USD $0.13205
≥50 USD $0.1083
≥150 USD $0.10545
≥500 USD $0.10165
≥3000 USD $0.09785
≥6000 USD $0.08835
Technical Details
Supply Chain
Factory Lead Time 17 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 380mW Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 380mW
Turn On Delay Time 3.3 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.2 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 87pF @ 25V
Current - Continuous Drain (Id) @ 25°C 270mA Ta
Gate Charge (Qg) (Max) @ Vgs 1.8nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 8.4 ns
Continuous Drain Current (ID) -270mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.27A
Drain to Source Breakdown Voltage -100V
Max Junction Temperature (Tj) 150°C
Dimensions
Height 1.1mm
Compliance
RoHS Status ROHS3 Compliant
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