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SI2365EDS-T1-GE3
Vishay SiliconixRoHS 
RoHS compliant
RoHS compliantPackage TO-236-3, SC-59, SOT-23-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 20V 5.9A TO-236
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Inventory: 4533
Minimum: 1
Total Price: USD $0.48
Unit Price: USD $0.48355
≥1 USD $0.48355
≥10 USD $0.3971
≥100 USD $0.38475
≥500 USD $0.3724
≥1000 USD $0.36005
Technical Details
Supply Chain
Factory Lead Time 14 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 1.437803g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2015
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1W Ta 1.7W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1W
Turn On Delay Time 9 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 32m Ω @ 4A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Current - Continuous Drain (Id) @ 25°C 5.9A Tc
Gate Charge (Qg) (Max) @ Vgs 36nC @ 8V
Rise Time 32 μs
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 21 μs
Turn-Off Delay Time 65 ns
Continuous Drain Current (ID) -4.5A
Threshold Voltage -1V
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 5.9A
Drain to Source Breakdown Voltage -20V
Max Junction Temperature (Tj) 150°C
Compliance
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Dimensions
Height 1.12mm
Length 3.04mm
Width 1.4mm
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