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STS10N3LH5
STMicroelectronicsRoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 10A 8-SOIC
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Inventory: 935
Minimum: 1
Total Price: USD $7.28
Unit Price: USD $7.2827
≥1 USD $7.2827
≥10 USD $5.9755
≥100 USD $5.78835
≥500 USD $5.60215
≥1000 USD $5.415
Technical Details
Supply Chain
Factory Lead Time 14 Weeks
Lifecycle Status NRND (Last Updated: 7 months ago)
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series STripFET? V
JESD-609 Code e4
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number STS10
Pin Count 8
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.5W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 4 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 21m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 475pF @ 25V
Current - Continuous Drain (Id) @ 25°C 10A Tc
Gate Charge (Qg) (Max) @ Vgs 4.6nC @ 5V
Rise Time 22 ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±22V
Fall Time (Typ) 2.8 ns
Turn-Off Delay Time 13 ns
Continuous Drain Current (ID) 10A
Gate to Source Voltage (Vgs) 22V
Pulsed Drain Current-Max (IDM) 40A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 50 mJ
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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