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NTR4101PT1G
ON SemiconductorRoHS 
RoHS compliant
RoHS compliantPackage TO-236-3, SC-59, SOT-23-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 20V 1.8A SOT-23
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Inventory: 1527
Minimum: 1
Total Price: USD $0.08
Unit Price: USD $0.0816
≥1 USD $0.0816
≥500 USD $0.06
≥1000 USD $0.05
≥2000 USD $0.04587
≥5000 USD $0.04287
≥10000 USD $0.03988
≥15000 USD $0.03857
≥50000 USD $2.26872
Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Physical
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 70MOhm
Subcategory Other Transistors
Voltage - Rated DC -20V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Current Rating -3.2A
Pin Count 3
Number of Elements 1
Power Dissipation-Max 420mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 730mW
Turn On Delay Time 7.5 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 85m Ω @ 1.6A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 675pF @ 10V
Current - Continuous Drain (Id) @ 25°C 1.8A Ta
Gate Charge (Qg) (Max) @ Vgs 8.5nC @ 4.5V
Rise Time 12.6 ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 12.6 ns
Turn-Off Delay Time 30.2 ns
Continuous Drain Current (ID) -3.2A
Threshold Voltage -720mV
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage -20V
Nominal Vgs -720 mV
Dimensions
Height 940μm
Length 2.9mm
Width 1.3mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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