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FDMC8878
ON SemiconductorRoHS 
RoHS compliant
RoHS compliantPackage 8-PowerWDFN
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 9.6A POWER33
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Inventory: 932
Minimum: 1
Total Price: USD $0.83
Unit Price: USD $0.8303
≥1 USD $0.8303
≥200 USD $0.68115
≥500 USD $0.66025
≥1000 USD $0.6384
Technical Details
Supply Chain
Factory Lead Time 23 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Dimensions
Height 950μm
Length 3mm
Width 3mm
Compliance
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series PowerTrench?
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
Termination SMD/SMT
ECCN Code EAR99
Resistance 14MOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code S-PDSO-N5
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 2.1W Ta 31W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.1W
Case Connection DRAIN
Turn On Delay Time 8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 14m Ω @ 9.6A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1230pF @ 15V
Current - Continuous Drain (Id) @ 25°C 9.6A Ta 16.5A Tc
Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V
Rise Time 4 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 3 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 9.6A
Threshold Voltage 1.7V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 60A
Dual Supply Voltage 30V
Nominal Vgs 1.7 V
Physical
Contact Plating Gold
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Number of Pins 8
Weight 180mg
Transistor Element Material SILICON
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