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CSD17309Q3
Texas InstrumentsRoHS 
RoHS compliant
RoHS compliantPackage 8-PowerTDFN
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET N-CH 30V 20A 8-Pin SON T/R
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Inventory: 6078
Minimum: 1
Total Price: USD $0.93
Unit Price: USD $0.9291
≥1 USD $0.9291
≥10 USD $0.76285
≥100 USD $0.7391
≥500 USD $0.71535
≥1000 USD $0.6916
Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Physical
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series NexFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Base Part Number CSD17309
Pin Count 8
Number of Elements 1
Power Dissipation-Max 2.8W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.8W
Case Connection DRAIN
Turn On Delay Time 6.1 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.4m Ω @ 18A, 8V
Vgs(th) (Max) @ Id 1.7V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1440pF @ 15V
Current - Continuous Drain (Id) @ 25°C 20A Ta 60A Tc
Gate Charge (Qg) (Max) @ Vgs 10nC @ 4.5V
Rise Time 9.9 ns
Drive Voltage (Max Rds On,Min Rds On) 3V 8V
Vgs (Max) +10V, -8V
Fall Time (Typ) 3.6 ns
Turn-Off Delay Time 13.2 ns
Continuous Drain Current (ID) 60A
Threshold Voltage 1.2V
Gate to Source Voltage (Vgs) 10V
Drain Current-Max (Abs) (ID) 20A
Drain to Source Breakdown Voltage 30V
Nominal Vgs 1.2 V
Feedback Cap-Max (Crss) 56 pF
Dimensions
Height 1.1mm
Length 3.3mm
Width 3.3mm
Thickness 1mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
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