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FDD6637
ON SemiconductorRoHS 
RoHS compliant
RoHS compliantPackage TO-252-3, DPak (2 Leads + Tab), SC-63
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
ON SEMICONDUCTOR - FDD6637 - Power MOSFET, P Channel, 35 V, 13 A, 0.0097 ohm, TO-252 (DPAK), Surface Mount
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Inventory: 5566
Minimum: 1
Total Price: USD $1.61
Unit Price: USD $1.6112
≥1 USD $1.6112
≥10 USD $1.3224
≥100 USD $1.2806
≥500 USD $1.23975
≥1000 USD $1.19795
Technical Details
Supply Chain
Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 15 hours ago)
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 260.37mg
Transistor Element Material SILICON
Dimensions
Height 2.517mm
Length 6.73mm
Width 6.22mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2017
Series PowerTrench?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 11.6MOhm
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.1W Ta 57W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.3W
Case Connection DRAIN
Turn On Delay Time 18 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 11.6m Ω @ 14A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2370pF @ 20V
Current - Continuous Drain (Id) @ 25°C 13A Ta 55A Tc
Gate Charge (Qg) (Max) @ Vgs 63nC @ 10V
Rise Time 10 ns
Drain to Source Voltage (Vdss) 35V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±25V
Fall Time (Typ) 36 ns
Turn-Off Delay Time 62 ns
Continuous Drain Current (ID) -13A
Threshold Voltage -1.6V
Gate to Source Voltage (Vgs) 25V
Drain Current-Max (Abs) (ID) 55A
Drain to Source Breakdown Voltage -35V
Max Junction Temperature (Tj) 150°C
Nominal Vgs -1.6 V
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