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PSMN4R0-40YS,115
Nexperia USA Inc.RoHS 
RoHS compliant
RoHS compliantPackage SC-100, SOT-669
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
NEXPERIA - PSMN4R0-40YS,115 - MOSFET, N CHANNEL, 40V, 100A, 4-SOT-669
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Inventory: 1507
Minimum: 1
Total Price: USD $5.67
Unit Price: USD $5.66865
≥1 USD $5.66865
≥10 USD $4.6512
≥100 USD $4.50585
≥500 USD $4.3605
≥1000 USD $4.21515
Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Mounting Type Surface Mount
Package / Case SC-100, SOT-669
Surface Mount YES
Number of Pins 4
Weight 453.59237mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Digi-Reel?
Published 2010
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Resistance 5.6MOhm
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 106W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 106W
Case Connection DRAIN
Turn On Delay Time 18 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.2m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2410pF @ 20V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Rise Time 19 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 34 ns
Continuous Drain Current (ID) 100A
JEDEC-95 Code MO-235
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 40V
Drain to Source Breakdown Voltage 40V
Avalanche Energy Rating (Eas) 77 mJ
Dimensions
Height 6.35mm
Length 6.35mm
Width 6.35mm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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