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IRLL2705TRPBF

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-261-4, TO-261AA
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 55V 3.8A SOT223
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Inventory: 10925
Minimum: 1
Total Price: USD $0.3
Unit Price: USD $0.29545
≥1 USD $0.29545
≥10 USD $0.2432
≥30 USD $0.2356
≥100 USD $0.228
≥500 USD $0.2204
≥1000 USD $0.1976

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1997
Series HEXFET?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Resistance 40mOhm
Terminal Finish Matte Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE
Voltage - Rated DC 55V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 3.8A
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PDSO-G4
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.1W
Case Connection DRAIN
Turn On Delay Time 6.2 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 40m Ω @ 3.8A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 870pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3.8A Ta
Gate Charge (Qg) (Max) @ Vgs 48nC @ 10V
Rise Time 12 ns
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Vgs (Max) ±16V
Fall Time (Typ) 22 ns
Turn-Off Delay Time 35 ns
Continuous Drain Current (ID) 3.8A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 16V
Drain Current-Max (Abs) (ID) 5.2A
Drain to Source Breakdown Voltage 55V
Dual Supply Voltage 55V
Recovery Time 88 ns
Max Junction Temperature (Tj) 150°C
Nominal Vgs 2 V

Dimensions

Height 1.8mm
Length 6.6802mm
Width 6.7mm

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