Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Series NexFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Base Part Number CSD18501
Number of Elements 1
Power Dissipation-Max 3.1W Ta 150W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.1W
Case Connection DRAIN
Turn On Delay Time 4.7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.2m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3840pF @ 20V
Current - Continuous Drain (Id) @ 25°C 22A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V
Rise Time 10 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 3.4 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 100A
Threshold Voltage 1.8V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 22A
Drain-source On Resistance-Max 0.0043Ohm
Drain to Source Breakdown Voltage 40V
Feedback Cap-Max (Crss) 23 pF