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CSD18531Q5A
Texas InstrumentsRoHS 
RoHS compliant
RoHS compliantPackage 8-PowerTDFN
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 60V 8SON
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Inventory: 1578
Minimum: 1
Total Price: USD $0.82
Unit Price: USD $0.817937
≥1 USD $0.817937
≥10 USD $0.684021
≥30 USD $0.610499
≥100 USD $0.527786
≥500 USD $0.491025
≥1000 USD $0.473957
Technical Details
Physical
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Dimensions
Height 1.1mm
Length 4.9mm
Width 6mm
Thickness 1mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Technical
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Series NexFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Base Part Number CSD18531
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.1W Ta 156W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 156W
Case Connection DRAIN
Turn On Delay Time 4.4 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.6m Ω @ 22A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3840pF @ 30V
Current - Continuous Drain (Id) @ 25°C 19A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs 43nC @ 10V
Rise Time 7.8 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 2.7 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 100A
Threshold Voltage 1.8V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Avalanche Energy Rating (Eas) 224 mJ
Max Junction Temperature (Tj) 175°C
Nominal Vgs 1.8 V
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