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SIR876ADP-T1-GE3
Vishay SiliconixRoHS 
RoHS compliant
RoHS compliantPackage PowerPAK? SO-8
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
Single N-Channel 100 V 14.5 mOhm Surface Mount TrenchFET Power Mosfet - SOIC-8
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Inventory: 3075
Minimum: 1
Total Price: USD $0.72
Unit Price: USD $0.72485
≥1 USD $0.72485
≥10 USD $0.59565
≥100 USD $0.57665
≥500 USD $0.55765
≥1000 USD $0.5396
Technical Details
Supply Chain
Factory Lead Time 14 Weeks
Dimensions
Height 1.17mm
Compliance
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
Series TrenchFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 14.5MOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Pin Count 8
JESD-30 Code R-PDSO-C5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 5W Ta 62.5W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 5W
Case Connection DRAIN
Turn On Delay Time 11 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 10.8m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.8V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1630pF @ 50V
Current - Continuous Drain (Id) @ 25°C 40A Tc
Gate Charge (Qg) (Max) @ Vgs 49nC @ 10V
Rise Time 16 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 16 ns
Turn-Off Delay Time 28 ns
Continuous Drain Current (ID) 15.2A
Threshold Voltage 1.5V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 40A
Drain to Source Breakdown Voltage 100V
Max Junction Temperature (Tj) 150°C
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