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CSD18533Q5A
Texas InstrumentsRoHS 
RoHS compliant
RoHS compliantPackage 8-PowerTDFN
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 60V 17A 8SON
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Inventory: 1641
Minimum: 1
Total Price: USD $9.71
Unit Price: USD $9.7053
≥1 USD $9.7053
≥10 USD $9.155935
≥100 USD $8.637674
≥500 USD $8.148749
≥1000 USD $7.6875
Technical Details
Supply Chain
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series NexFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Base Part Number CSD18533
Number of Elements 1
Power Dissipation-Max 3.2W Ta 116W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.2W
Case Connection DRAIN
Turn On Delay Time 5.2 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.9m Ω @ 18A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2750pF @ 30V
Current - Continuous Drain (Id) @ 25°C 17A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V
Rise Time 5.5ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 2 ns
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 100A
Threshold Voltage 1.9V
Gate to Source Voltage (Vgs) 20V
DS Breakdown Voltage-Min 60V
Nominal Vgs 1.9 V
Feedback Cap-Max (Crss) 9 pF
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Dimensions
Height 1.1mm
Length 4.9mm
Width 6mm
Thickness 1mm
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