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NTD5802NT4G
ON SemiconductorRoHS 
RoHS compliant
RoHS compliantPackage TO-252-3, DPak (2 Leads + Tab), SC-63
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET N-CH 40V 101A 3-Pin(2+Tab) DPAK T/R
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Inventory: 5748
Minimum: 1
Total Price: USD $0.87
Unit Price: USD $0.86517
≥1 USD $0.86517
≥10 USD $0.8162
≥100 USD $0.77
≥500 USD $0.72642
≥1000 USD $0.6853
≥3000 USD $0.64651
Technical Details
Supply Chain
Factory Lead Time 14 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Physical
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 2.5W Ta 93.75W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 93.75W
Case Connection DRAIN
Turn On Delay Time 14 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.4m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5025pF @ 25V
Current - Continuous Drain (Id) @ 25°C 16.4A Ta 101A Tc
Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V
Rise Time 52 ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 8.5 ns
Turn-Off Delay Time 39 ns
Continuous Drain Current (ID) 16.4A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0078Ohm
Drain to Source Breakdown Voltage 40V
Avalanche Energy Rating (Eas) 240 mJ
Dimensions
Height 2.38mm
Length 6.73mm
Width 6.22mm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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