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BSZ160N10NS3GATMA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package 8-PowerTDFN
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 100V 40A TSDSON-8
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Inventory: 3932
Minimum: 1
Total Price: USD $1.26
Unit Price: USD $1.259355
≥1 USD $1.259355
≥10 USD $1.188071
≥100 USD $1.120823
≥500 USD $1.057378
≥1000 USD $0.997526

Technical Details

Physical

Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Surface Mount YES
Transistor Element Material SILICON

Compliance

RoHS Status ROHS3 Compliant

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series OptiMOS?
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Reach Compliance Code not_compliant
Pin Count 8
JESD-30 Code S-PDSO-N5
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.1W Ta 63W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 16m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 3.5V @ 12μA
Input Capacitance (Ciss) (Max) @ Vds 1700pF @ 50V
Current - Continuous Drain (Id) @ 25°C 8A Ta 40A Tc
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 40A
Drain-source On Resistance-Max 0.016Ohm
Pulsed Drain Current-Max (IDM) 160A
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 80 mJ

Alternative Model

SI1067X-T1-E3
Vishay Siliconix

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