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BSS84,215
Nexperia USA Inc.RoHS 
RoHS compliant
RoHS compliantPackage TO-236-3, SC-59, SOT-23-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
NEXPERIA - BSS84,215 - Leistungs-MOSFET, p-Kanal, 50 V, 130 mA, 6 ohm, SOT-23, Oberfl?chenmontage
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Pricing & Ordering
Inventory: 6520
Minimum: 10
Total Price: USD $0.46
Unit Price: USD $0.0456
≥10 USD $0.0456
≥100 USD $0.038
≥300 USD $0.03705
≥3000 USD $0.03515
≥6000 USD $0.0342
≥9000 USD $0.0304
Technical Details
Supply Chain
Factory Lead Time 4 Weeks
Dimensions
Height 1.1mm
Technical
Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Pin Count 3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 250mW Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 250mW
Turn On Delay Time 3 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 10 Ω @ 130mA, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 45pF @ 25V
Current - Continuous Drain (Id) @ 25°C 130mA Ta
Drain to Source Voltage (Vdss) 50V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Turn-Off Delay Time 7 ns
Continuous Drain Current (ID) -130mA
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -50V
Max Junction Temperature (Tj) 150°C
Compliance
RoHS Status ROHS3 Compliant
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