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FDV303N
ON SemiconductorRoHS 
RoHS compliant
RoHS compliantPackage TO-236-3, SC-59, SOT-23-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 25V 680MA SOT-23
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Inventory: 4000
Minimum: 1
Total Price: USD $0.05
Unit Price: USD $0.04896
≥1 USD $0.04896
≥500 USD $0.036
≥1000 USD $0.03
≥2000 USD $0.02752
≥5000 USD $0.02572
≥10000 USD $0.02393
≥15000 USD $0.02314
≥50000 USD $1.36123
Technical Details
Supply Chain
Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 16 hours ago)
Physical
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Dimensions
Height 1.11mm
Length 2.92mm
Width 3.05mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1997
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination SMD/SMT
ECCN Code EAR99
Resistance 450mOhm
Terminal Finish TIN
Subcategory FET General Purpose Power
Voltage - Rated DC 25V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 680mA
Time@Peak Reflow Temperature-Max (s) 30
Number of Elements 1
Number of Channels 1
Voltage 20V
Power Dissipation-Max 350mW Ta
Element Configuration Single
Current 12A
Operating Mode ENHANCEMENT MODE
Power Dissipation 350mW
Turn On Delay Time 3 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 450m Ω @ 500mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 10V
Current - Continuous Drain (Id) @ 25°C 680mA Ta
Gate Charge (Qg) (Max) @ Vgs 2.3nC @ 4.5V
Rise Time 8.5 ns
Drive Voltage (Max Rds On,Min Rds On) 2.7V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 8.5 ns
Turn-Off Delay Time 17 ns
Continuous Drain Current (ID) 680mA
Threshold Voltage 800mV
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage 25V
Dual Supply Voltage 25V
Max Junction Temperature (Tj) 150°C
Nominal Vgs 800 mV
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