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BSS138LT1G
ON SemiconductorRoHS 
RoHS compliant
RoHS compliantPackage TO-236-3, SC-59, SOT-23-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 50V 200MA SOT-23
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Inventory: 60774
Minimum: 1
Total Price: USD $0.09
Unit Price: USD $0.08603
≥1 USD $0.08603
≥500 USD $0.06326
≥1000 USD $0.05272
≥2000 USD $0.04836
≥5000 USD $0.0452
Technical Details
Supply Chain
Factory Lead Time 14 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Physical
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Dimensions
Height 1.01mm
Length 3.04mm
Width 1.4mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 3.5Ohm
Subcategory FET General Purpose Powers
Voltage - Rated DC 50V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 200mA
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Power Dissipation-Max 225mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 225mW
Turn On Delay Time 20 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.5 Ω @ 200mA, 5V
Vgs(th) (Max) @ Id 1.5V @ 1mA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 25V
Current - Continuous Drain (Id) @ 25°C 200mA Ta
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs (Max) ±20V
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 200mA
Threshold Voltage 1.5V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.2A
Drain to Source Breakdown Voltage 50V
Nominal Vgs 1.5 V
Feedback Cap-Max (Crss) 5 pF
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