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IPT015N10N5ATMA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package 8-PowerSFN
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description MOSFET N-Ch 100V 300A HSOF-8
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Inventory: 3833
Minimum: 1
Total Price: USD $2.95
Unit Price: USD $2.95355
≥1 USD $2.95355
≥10 USD $2.42345
≥100 USD $2.34745
≥500 USD $2.2724
≥1000 USD $2.1964

Technical Details

Supply Chain

Factory Lead Time 18 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerSFN
Number of Pins 8
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series OptiMOS?
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
Technology MOSFET (Metal Oxide)
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 375W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 36 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.5m Ω @ 150A, 10V
Vgs(th) (Max) @ Id 3.8V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 16000pF @ 50V
Current - Continuous Drain (Id) @ 25°C 300A Tc
Gate Charge (Qg) (Max) @ Vgs 211nC @ 10V
Rise Time 30ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 30 ns
Turn-Off Delay Time 85 ns
Continuous Drain Current (ID) 300A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 100V
Drain Current-Max (Abs) (ID) 32A
Avalanche Energy Rating (Eas) 652 mJ

Compliance

RoHS Status ROHS3 Compliant
Lead Free Contains Lead

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