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CSD17308Q3
Texas InstrumentsRoHS 
RoHS compliant
RoHS compliantPackage 8-PowerTDFN
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
TEXAS INSTRUMENTS - CSD17308Q3 - MOSFET, N CH, 30V, 47A, 8SON
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Total Price: USD $0.4
Unit Price: USD $0.4028
≥1 USD $0.4028
≥10 USD $0.3306
≥30 USD $0.32015
≥100 USD $0.31065
≥500 USD $0.3002
≥1000 USD $0.26885
Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Lifecycle Status ACTIVE (Last Updated: 21 hours ago)
Dimensions
Height 1.1mm
Length 3.3mm
Width 3.3mm
Thickness 1mm
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series NexFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Base Part Number CSD17308
Pin Count 8
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2.7W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.7W
Case Connection DRAIN
Turn On Delay Time 4.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 10.3m Ω @ 10A, 8V
Vgs(th) (Max) @ Id 1.8V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 700pF @ 15V
Current - Continuous Drain (Id) @ 25°C 14A Ta 44A Tc
Gate Charge (Qg) (Max) @ Vgs 5.1nC @ 4.5V
Rise Time 5.7 ns
Drive Voltage (Max Rds On,Min Rds On) 3V 8V
Vgs (Max) +10V, -8V
Fall Time (Typ) 2.3 ns
Turn-Off Delay Time 9.9 ns
Continuous Drain Current (ID) 14A
Threshold Voltage 1.3V
Gate to Source Voltage (Vgs) 10V
Drain Current-Max (Abs) (ID) 47A
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 65 mJ
Max Junction Temperature (Tj) 150°C
Nominal Vgs 1.3 V
Feedback Cap-Max (Crss) 35 pF
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
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