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SQM120P06-07L_GE3
Vishay SiliconixRoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
VISHAY - SQM120P06-07L_GE3 - Leistungs-MOSFET, p-Kanal, 60 V, 120 A, 0.0056 ohm, TO-263 (D2PAK), Oberfl?chenmontage
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Inventory: 9078
Minimum: 1
Total Price: USD $13.52
Unit Price: USD $13.52113
≥1 USD $13.52113
≥10 USD $12.75578
≥100 USD $12.03376
≥500 USD $11.3526
≥1000 USD $10.71
≥3000 USD $10.10377
Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Dimensions
Height 5.08mm
Compliance
RoHS Status ROHS3 Compliant
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series TrenchFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 375W Tc
Power Dissipation 375W
Turn On Delay Time 15 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 6.7mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 14280pF @ 25V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Gate Charge (Qg) (Max) @ Vgs 270nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 97 ns
Continuous Drain Current (ID) -120A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -60V
Max Junction Temperature (Tj) 175°C
Drain to Source Resistance 5.6mOhm
Physical
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package TO-263 (D2Pak)
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