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FDMS3662
ON SemiconductorRoHS 
RoHS compliant
RoHS compliantPackage 8-PowerTDFN
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET 100V N-Channel PowerTrench
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Inventory: 3597
Minimum: 1
Total Price: USD $8.3
Unit Price: USD $8.2954
≥1 USD $8.2954
≥10 USD $6.80675
≥100 USD $6.59395
≥500 USD $6.38115
≥1000 USD $6.16835
Technical Details
Supply Chain
Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Physical
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Weight 68.1mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 14.8MOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
JESD-30 Code R-PDSO-F5
Number of Elements 1
Power Dissipation-Max 2.5W Ta 104W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Case Connection DRAIN
Turn On Delay Time 25 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 14.8m Ω @ 8.9A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4620pF @ 50V
Current - Continuous Drain (Id) @ 25°C 8.9A Ta 49A Tc
Gate Charge (Qg) (Max) @ Vgs 75nC @ 10V
Rise Time 15 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 6 ns
Turn-Off Delay Time 32 ns
Continuous Drain Current (ID) 8.9A
Threshold Voltage 3.5V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 49A
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 90A
Nominal Vgs 3.5 V
Dimensions
Height 1.05mm
Length 5mm
Width 6mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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