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BSC035N10NS5ATMA1
Infineon TechnologiesRoHS 
RoHS compliant
RoHS compliantPackage 8-PowerTDFN
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 100V 100A TDSON-8
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Inventory: 7283
Minimum: 1
Total Price: USD $1.92
Unit Price: USD $1.924968
≥1 USD $1.924968
≥10 USD $1.816004
≥100 USD $1.71321
≥500 USD $1.616233
≥1000 USD $1.524753
Technical Details
Supply Chain
Factory Lead Time 26 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Dimensions
Height 1.1mm
Compliance
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series OptiMOS?
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 2.5W Ta 156W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Case Connection DRAIN
Turn On Delay Time 22 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.5m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 3.8V @ 115μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 6500pF @ 50V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 87nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 47 ns
Continuous Drain Current (ID) 100A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 100V
Drain-source On Resistance-Max 0.0035Ohm
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 400A
Avalanche Energy Rating (Eas) 300 mJ
Max Junction Temperature (Tj) 150°C
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