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BSC160N15NS5ATMA1
Infineon TechnologiesRoHS 
RoHS compliant
RoHS compliantPackage 8-PowerTDFN
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 150V 56A 8TDSON
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Inventory: 5964
Minimum: 1
Total Price: USD $1.48
Unit Price: USD $1.4782
≥1 USD $1.4782
≥10 USD $1.21315
≥100 USD $1.17515
≥500 USD $1.13715
≥1000 USD $1.09915
Technical Details
Supply Chain
Factory Lead Time 26 Weeks
Physical
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Surface Mount YES
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series OptiMOS?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 96W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 96W
Case Connection DRAIN
Turn On Delay Time 9.6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 16m Ω @ 28A, 10V
Vgs(th) (Max) @ Id 4.6V @ 60μA
Input Capacitance (Ciss) (Max) @ Vds 1820pF @ 75V
Current - Continuous Drain (Id) @ 25°C 56A Tc
Gate Charge (Qg) (Max) @ Vgs 23.1nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 8V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 10.8 ns
Continuous Drain Current (ID) 56A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 150V
Pulsed Drain Current-Max (IDM) 224A
Avalanche Energy Rating (Eas) 43 mJ
Max Junction Temperature (Tj) 150°C
Dimensions
Height 1.1mm
Compliance
RoHS Status ROHS3 Compliant
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