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SIR662DP-T1-GE3
Vishay SiliconixRoHS 
RoHS compliant
RoHS compliantPackage PowerPAK? SO-8
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET N-CH 60V 35.8A 8-Pin PowerPAK SO T/R
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Inventory: 7128
Minimum: 1
Total Price: USD $6.26
Unit Price: USD $6.25845
≥1 USD $6.25845
≥10 USD $5.9042
≥100 USD $5.57
≥500 USD $5.25472
≥1000 USD $4.95728
≥3000 USD $4.67668
Technical Details
Supply Chain
Factory Lead Time 14 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK? SO-8
Number of Pins 8
Weight 506.605978mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series TrenchFET?
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 2.7mOhm
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 8
JESD-30 Code R-XDSO-C5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 6.25W Ta 104W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 6.25W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.7m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4365pF @ 30V
Current - Continuous Drain (Id) @ 25°C 60A Tc
Gate Charge (Qg) (Max) @ Vgs 96nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 60A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 20V
DS Breakdown Voltage-Min 60V
Nominal Vgs 1 V
Compliance
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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