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BSC030N08NS5ATMA1
Infineon TechnologiesRoHS 
RoHS compliant
RoHS compliantPackage 8-PowerTDFN
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 80V 100A 8TDSON
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Inventory: 3246
Minimum: 1
Total Price: USD $1.94
Unit Price: USD $1.9361
≥1 USD $1.9361
≥10 USD $1.5884
≥100 USD $1.539
≥500 USD $1.4896
≥1000 USD $1.43925
Technical Details
Supply Chain
Factory Lead Time 26 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Weight 506.605978mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series OptiMOS?
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2.5W Ta 139W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Case Connection DRAIN
Turn On Delay Time 20 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 3.8V @ 95μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 5600pF @ 40V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 76nC @ 10V
Rise Time 12 ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 43 ns
Continuous Drain Current (ID) 22A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 80V
Drain-source On Resistance-Max 0.003Ohm
Drain to Source Breakdown Voltage 80V
Pulsed Drain Current-Max (IDM) 400A
Avalanche Energy Rating (Eas) 250 mJ
Max Junction Temperature (Tj) 150°C
Dimensions
Height 1.1mm
Compliance
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
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