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FDMS86201

ON Semiconductor
RoHS
RoHS RoHS compliant
Package 8-PowerTDFN
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 120V POWER56
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Inventory: 150
Minimum: 1
Total Price: USD $3.26
Unit Price: USD $3.25704
≥1 USD $3.25704
≥10 USD $3.072683
≥100 USD $2.898754
≥500 USD $2.734674
≥1000 USD $2.579877

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Weight 68.1mg
Transistor Element Material SILICON

Dimensions

Height 1.05mm
Length 5mm
Width 6mm

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2017
Series PowerTrench?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 14.5MOhm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
JESD-30 Code R-PDSO-F5
Number of Elements 1
Power Dissipation-Max 2.5W Ta 104W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 104W
Case Connection DRAIN
Turn On Delay Time 13 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 11.5m Ω @ 11.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2735pF @ 60V
Current - Continuous Drain (Id) @ 25°C 11.6A Ta 35A Tc
Gate Charge (Qg) (Max) @ Vgs 46nC @ 10V
Rise Time 7.7 ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 7.1 ns
Turn-Off Delay Time 27 ns
Continuous Drain Current (ID) 35A
Threshold Voltage 2.6V
JEDEC-95 Code MO-240AA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 65A
Drain to Source Breakdown Voltage 120V
Avalanche Energy Rating (Eas) 264 mJ
Nominal Vgs 2.6 V

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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